elektronische bauelemente bcp882h 3a , 70 v npn plastic-encapsulate transistor 04-nov-2014 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a e c d b k h f g l j 1 2 3 4 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features small flat package. high dc current gain low v ce(sat) marking classification of h fe rank bcp882h-r bcp882h-o bcp882h-y bcp882h-gr range 60~120 100~200 160~320 200~400 package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 70 v collector to emitter voltage v ceo 70 v emitter to base voltage v ebo 6 v continuous collector current i c 3 a collector power dissipation p c 500 mw thermal resistance junction to ambient r ja 250 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 70 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 70 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 6 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 1 a v cb =40v, i e =0 collector cut-off current i ceo - - 10 a v ce =30v, i b =0 emitter cut-off current i ebo - - 1 a v eb =6v, i c =0 dc current gain h fe 60 - 400 v ce =2v, i c =1a collector to emitter saturation voltage v ce(sat) - - 0.5 v i c =2a, i b =0.2a base to emitter saturation voltage v be(sat) - - 1.5 v i c =2a, i b =0.2a transition frequency f t - 50 - mhz v ce =5v, i c =0.1a, f=10mhz sot-89 millimeter millimeter ref. min. max. ref. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.5 0 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 d882h 1. base 2. collector 3. emitter
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